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    Finally, MBE, derived from thermal evaporation, found its conception at Bell Labs by a group of scientists including John R. Arthur Jr who first published on the use of separate “molecular beams” of gallium and arsenic to form epitaxial GaAs films [ 34 ].
    MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs ). Original ideas of MBE process were first established by K. G. Günther. Films he deposited were not epitaxial, but were deposited on glass substrates.
    MBE is extremely good at producing very sharp interfaces. The effusion cells that produce the molecular beams of source materials are typically paired with a mechanical shutter that can quickly start or stop the beams in much less time than it takes to grow an atomic layer of material.
    Hybrid MBE has been used to produce many electronic devices out of these materials including iongel-gated field-effect transistors [ 174 ], MOSFETs [ 175 ], MESFETs [ 176, 177 ], and RF FETs with the highest frequency operation of any complex oxide [ 178 ].
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