Building upon research from The University of Bern, Dr. Lin and Dr. Sokół are pioneering the development of conversion ...

The compound semiconductor materials market size is predicted to be worth US$ 24.31 billion in 2023 and rise to US$ 69.02 ...

Far beyond the robust Cd-containing QWs, ZnSe QWs have demonstrated great potential for next-generation environmentally friendly applications as a representative heavy-metal-free semiconductor. (a) ...

The first attempts to fabricate blue and green diode lasers used II–VI semiconductor materials — in particular the ZnSe material system 3. However, even after substantial development efforts ...

The global compound semiconductor market was valued at $66,623 million in 2016, and is expected to reach $142,586 million by ...

The work in progress includes: Development heavy metal detection LIBS/LEAFS platform based on Cr:ZnSe/S for an ultrasensitive (sub-ppb level) and fast detection of Cd, Mn and As with sensitivity ...

The materials NANOTECH is able to work with include fused silica, optical glasses, crystals (CaF2, Ge, Si, ZnSe, ZnS etc.) and ceramics (WC, SiC). Further more, with QED's super-polishing MR fluid, ...

Skight Optics Co., Ltd. located in Beijing, is an excellent company in China in manufacture, research and development of optics, crystals. We are adept in producing highly precise optics. Our ...

In the IRSpirit-ZX model, the mirror consists of zinc selenide (ZnSe), which is more moisture-resistant than the traditionally used potassium bromide (KBr). Therefore, this model can be used with ...

Specifically, she worked on growth of ZnSe thin films on GaAs substrates by MOVPE at NTT, and GaSe thin films on GaAs and silicon substrates at OTRL. She characterized the films using techniques such ...

Available accessories include Transmission module, TumblIR, DialPath (30/50/100 um or 50/100/200 um), Diffuse Module, Gas Cell, 1B Diamond ATR, 1B Ge ATR, 5B ZnSe ATR, 10 degree SRA, 45 degree SRA, ...

Ghodsi, Hamed and Kaatuzian, Hassan 2015. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system. Journal of ...